Hall voltage drives pulsing counter-currents of the sliding charge density wave and of quantized normal carriers at self-filled Landau levels

The journal Nature Quantum Materials has just published [1] an article presented by an international team from the Neel Institute in Grenoble – France, LPTMS-CNRS and the University Paris-Sud Saclay at Orsay – France and the Institute for Radioengenering and Electronics in Moscow – Russia. The article is entitled “Hall voltage drives pulsing counter-currents of the sliding charge density wave and of quantized normal carriers at self-filled Landau levels”.
The presented studies integrate such different phenomena as the quantum Hall state for normal electrons, collective effects for electrons condensed to the sliding charge density wave state, conversion among the two kinds of electronic states by a coherent high frequency sequence of dynamical topological events – instantaneous phase-slip centers. The earlier unknown regimes include: self-tuning to the integer quantum Hall state by means of redistribution of the electronic density under the Lorentz force; quantum Hall state under the applied current and the resulting pulsing non-stationary regime; depinning and sliding of the charge density wave under the Hall voltage; surprising regime of compensated countercurrents from the normal and collective subsystems. All that was achieved thanks to the original design of junction structures by means of the focused ion beam technology and by the numerical modeling of spatio-temporal evolution based on the newly derived equations.

[1] Serguei Brazovskii, Andrey Orlov, Alexander Sinchenko, Pierre Monceau, and Yuri Latyshev, 
NPJ Quantum Materials 2, 61 (2017)

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Figure. Evolution with periodic phase slips as spatiotemporal vortices: the 3D plot of the CDW phase ϕ(t,x)/π on top of the density plot showing the vorticity (left); the CDW amplitude A(t,x) with nodes at the vortex centers (right).