Wetting transition on a one-dimensional disorder

D. M. Gangardt 1, S. K. Nechaev 2, 3

Journal of Statistical Physics 130 (2008) 483-502

We consider wetting of a one-dimensional random walk on a half-line $x\ge 0$ in a short-ranged potential located at the origin $x=0$. We demonstrate explicitly how the presence of a quenched chemical disorder affects the pinning-depinning transition point. For small disorders we develop a perturbative technique which enables us to compute explicitly the averaged temperature (energy) of the pinning transition. For strong disorder we compute the transition point both numerically and using the renormalization group approach. Our consideration is based on the following idea: the random potential can be viewed as a periodic potential with the period $n$ in the limit $n\to\infty$. The advantage of our approach stems from the ability to integrate exactly over all spatial degrees of freedoms in the model and to reduce the initial problem to the analysis of eigenvalues and eigenfunctions of some special non-Hermitian random matrix with disorder--dependent diagonal and constant off-diagonal coefficients. We show that even for strong disorder the shift of the averaged pinning point of the random walk in the ensemble of random realizations of substrate disorder is indistinguishable from the pinning point of the system with preaveraged (i.e. annealed) Boltzmann weight.

  • 1. School of Physics and Astronomy, University of Birmingham,
    University of Birmingham
  • 2. Laboratoire de Physique Théorique et Modèles Statistiques (LPTMS),
    CNRS : UMR8626 – Université Paris XI - Paris Sud
  • 3. P.N. Lebedev Institute,
    The Russian Academy of Science